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NP4406SR - 30V N-Channel Enhancement Mode MOSFET

General Description

The NP4406SR uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

Key Features

  • S.
  • VDS =30V，ID =13A RDS(ON)(Typ. )=8mΩ @VGS=10V RDS(ON)(Typ. )=11mΩ @VGS=4.5V.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NP4406SR
Manufacturer natlinear
File Size 379.30 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4406SR Datasheet

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NP4406SR 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4406SR uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. D G General Features S  VDS =30V，ID =13A RDS(ON)(Typ.)=8mΩ @VGS=10V RDS(ON)(Typ.)=11mΩ @VGS=4.