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NP4886BD6 - 40V Dual N-Channel Enhancement Mode MOSFET

General Description

The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Key Features

  • VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Marking and pin assignment.

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Datasheet Details

Part number NP4886BD6
Manufacturer natlinear
File Size 824.89 KB
Description 40V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4886BD6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP4886BD6 40V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. General Features  VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.