natlinear NP4886BD6
The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.| Part No. | NP4886BD6 |
|---|---|
| Datasheet | NP4886BD6 Download |
| Manufacturer | natlinear |
| Description | 40V Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Marking and pin assignment Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Package
● PDFN5*6-8L-B Note： XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4886BD6-G Storage Temperature -55°C to +150°C Package PDFN5*6-8L-B Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Drain Current-Continuous (Silicon Limited) Pulsed Drain Current (Package Limited) Single pulse avalanche energy Maximum power dissipation Operating junction Temperature range TA=25°C TA=75°C TA=25°C TA=75°C symbol limit unit VDS 40 V VGS ±20 V 20 ID A 16 IDM 80 A EAS 22 mJ 31 PD W 16 Tj -55—150 ℃ Rev.1.1 —Sept.
