natlinear NP6008BSR
The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.| Part No. | NP6008BSR |
|---|---|
| Datasheet | NP6008BSR Download |
| Manufacturer | natlinear |
| Description | 60V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram D G SGENERAL FEATURES
Marking and pin assignment● VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.5V
● Excellent gate charge RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● 100% UIS tested Application HF Pb
● Synchronus Rectification in DC/DC Converters
● Industrial and Motor Drive applications SOP-8 Top View Bottom View D D D D NP6X0XY0XY8XYY G S S S XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6008BSR -G Storage Temperature -55°C to +150°C Package SOP-8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=70°C Pulsed Drain Current Avalanche energy(Tj=25℃ ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω) Power Dissipation TC=25°C TC=70°C Operating junction Temperature range symbol VDS VGS ID IDM EAS PD Tj Rev.1.1 —Oct. 22. 2022 1 Devices Per Reel 4000 limit unit 60 V ±20 V 8 A 7 32 A 45 mJ 2...
