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NP6008BSR - 60V N-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number NP6008BSR
Manufacturer natlinear
File Size 360.89 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6008BSR Datasheet

General Description

The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Overview

NP6008BSR 60V N-Channel Enhancement Mode MOSFET.

Key Features

  • Marking and pin assignment.
  • VDS =60V，ID =8A RDS(ON)(Typ. )=32mΩ @VGS=10V RDS(ON)(Typ. )=39mΩ @VGS=4.5V.
  • Excellent gate charge RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • 100% UIS tested.

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