NP6008BSR Datasheet PDF - natlinear 60V N-Channel Enhancement Mode MOSFET Specs

NP6008BSR - 60V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

Marking and pin assignment.
VDS =60V，ID =8A RDS(ON)(Typ. )=32mΩ @VGS=10V RDS(ON)(Typ. )=39mΩ @VGS=4.5V.
Excellent gate charge RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
100% UIS tested.

Datasheet Details

Part number	NP6008BSR
Manufacturer	natLinear
File Size	360.89 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	NP6008BSR Datasheet
Additional preview pages of the NP6008BSR datasheet.

📁 Similar Datasheet

NP60N03KUG - MOS FIELD EFFECT TRANSISTOR (Renesas)

NP60N03SUG - N-CHANNEL POWER MOS FET (Renesas)

NP60N04KUG - N-Channel MOSFET (Renesas)

NP60N04MUG - N-Channel Power MOSFET (Renesas)

NP60N04MUK - N-Channel MOSFET (Renesas)

NP60N04NUK - N-Channel MOSFET (Renesas)

NP60N04PDK - N-Channel Power MOSFET (Renesas)

NP60N04VDK - N-Channel MOSFET (Renesas)

NP60N04VLK - N-Channel MOSFET (Renesas)

NP60N04VUK - N-Channel MOSFET (Renesas)

Full PDF Text Transcription

Click to expand full text

NP6008BSR 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S General Features Marking and pin assignment  VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.

Published: Jul 23, 2024 |