natlinear NP6008N
The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NP6008N |
|---|---|
| Datasheet | NP6008N Download |
| Manufacturer | natlinear |
| Description | 60V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram It can be used in a wide variety of applications.GENERAL FEATURES
D G● VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)
● High density cell design for ultra low Rdson. Marking and pin assignment
● Fully characterized avalanche voltage and current. SOT-223
● Low gate to drain charge to reduce switching （Top View） losses. Application
● Power switching application.
● Hard switched and high frequency circuits.
● Uninterruptible power supply. Package
● SOT-223 HF Pb NP6008N XXXX YYYY NP: Natlinear Power 6008: 60V8A N: SOT-223 XXXX: Wafer Lot No. YYYY: Quality Code Ordering Information Part Number NP6008N-G Storage Temperature -55°C to +150°C Package SOT-223 Devices Per Reel 3000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=70°C Pulsed Drain Current Avalanche Current Avalanche energy( L=0.1mH) Maximum power dissipation TC=25...
