NP6008N Description
Schematic diagram The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NP6008N Key Features
- VDS =60V ID =10A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
- SOT-223