NP6008N
Description
Schematic diagram
The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V ID =10A
RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω)
RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)
- High density cell design for ultra low Rdson.
Marking and pin assignment
- Fully characterized avalanche voltage and current.
SOT-223
- Low gate to drain charge to reduce switching
（Top View） losses.
Application
- Power switching application.
- Hard switched and high frequency circuits.
- Uninterruptible power supply.
Package
- SOT-223
HF Pb
NP6008N XXXX YYYY
NP: Natlinear Power 6008: 60V8A N: SOT-223
XXXX: Wafer Lot No. YYYY: Quality Code
Ordering Information
Part Number NP6008N-G
Storage Temperature -55°C to +150°C
Package SOT-223
Devices Per Reel 3000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter
Drain-source voltage
Gate-source...
