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NP6008N - 60V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • D G.
  • VDS =60V ID =10A RDS(ON).

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Datasheet Details

Part number NP6008N
Manufacturer natLinear
File Size 0.99 MB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6008N Datasheet
Additional preview pages of the NP6008N datasheet.

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60V N-Channel Enhancement Mode MOSFET NP6008N Description Schematic diagram The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D G  VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)  High density cell design for ultra low Rdson. Marking and pin assignment  Fully characterized avalanche voltage and current. SOT-223  Low gate to drain charge to reduce switching （Top View） losses. Application  Power switching application.  Hard switched and high frequency circuits.  Uninterruptible power supply. Package  SOT-223 HF Pb NP6008N XXXX YYYY NP: Natlinear Power 6008: 60V8A N: SOT-223 XXXX: Wafer Lot No.
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