NP6608D6
Description
Schematic diagram
The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel：
VDS =20V，ID =8A
RDS(ON)=9.5mΩ (typical) @ VGS=4.5V
RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel：
VDS =-20V，ID =-8A
RDS(ON)=14mΩ (typical) @ VGS=-4.5V
RDS(ON)=18mΩ (typical) @ VGS=-2.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
HF Pb
- Pch+Nch plementary MOSFET for DC-FAN
- H-Bridge application
N-CH
P-CH
Marking and pin assignment
PDFN5×6-8L-B
D1 D1 D2 D2
D2 D2 D1 D1
NP6608 XXXXX YYYYY
S1 G1 S2 G2
Top View
XXXX- Wafer Information YYYY- Quality Code
G2 S2 G1 S1
Bottom View
Ordering Information
Part Number NP6608D6-G
Storage Temperature -55°C to +150°C
Package PDFN5-...
