NP6608D6 Datasheet PDF - natlinear N And P-Channel Enhancement Mode MOSFET Specs

NP6608D6 - N And P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

N-channel： VDS =20V，ID =8A RDS(ON)=9.5mΩ (typical) @ VGS=4.5V RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-8A RDS(ON)=14mΩ (typical) @ VGS=-4.5V RDS(ON)=18mΩ (typical) @ VGS=-2.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

Datasheet Details

Part number	NP6608D6
Manufacturer	natLinear
File Size	752.16 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	NP6608D6 Datasheet
Additional preview pages of the NP6608D6 datasheet.

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Full PDF Text Transcription

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NP6608D6 N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =20V，ID =8A RDS(ON)=9.5mΩ (typical) @ VGS=4.5V RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-8A RDS(ON)=14mΩ (typical) @ VGS=-4.5V RDS(ON)=18mΩ (typical) @ VGS=-2.

Published: Jul 23, 2024 |