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NP6608D6 - N And P-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number NP6608D6
Manufacturer natlinear
File Size 752.16 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6608D6 Datasheet

General Description

The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Overview

NP6608D6 N And P-Channel Enhancement Mode MOSFET.

Key Features

  • N-channel： VDS =20V，ID =8A RDS(ON)=9.5mΩ (typical) @ VGS=4.5V RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-8A RDS(ON)=14mΩ (typical) @ VGS=-4.5V RDS(ON)=18mΩ (typical) @ VGS=-2.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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