NP6608QR Description
Schematic diagram The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
NP6608QR Key Features
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification