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NP6608QR - 20V N And P-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number NP6608QR
Manufacturer natlinear
File Size 866.04 KB
Description 20V N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6608QR Datasheet

General Description

The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Overview

NP6608QR 20V N And P-Channel Enhancement Mode MOSFET.

Key Features

  • N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5V RDS(ON)=19.7mΩ (typical) @ VGS=-2.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Marking and pin assignment PDFN3×3-8L （Top View）.

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