NP6608QR
Description
Schematic diagram
The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5V RDS(ON)=19.7mΩ (typical) @ VGS=-2.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Marking and pin assignment
PDFN3×3-8L （Top View）
Application
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
Package
PDFN3×3-8L
Ordering Information
Part Number NP6608QR-G
Storage Temperature -55°C to +150°C
Package PDFN3×3-8L
Devices Per Reel 5000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Drain-source...
