natlinear NP6608QR
The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NP6608QR |
|---|---|
| Datasheet | NP6608QR Download |
| Manufacturer | natlinear |
| Description | 20V N And P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5V RDS(ON)=19.7mΩ (typical) @ VGS=-2.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Marking and pin assignment PDFN3×3-8L （Top View） Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Package PDFN3×3-8L Ordering Information Part Number NP6608QR-G Storage Temperature -55°C to +150°C Package PDFN3×3-8L Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Drain Current-Continuous (Silicon Limited) Symbol VDS VGS TA=25°C TA=75°C ID Limit Unit N P 20 -20 V ±10 ±12 V 10 -10 A 8 -8 Rev.1.1 —Dec. 22. 2023 1 Pulsed Drain Current (Package Limited) Avalanche ene...
