NP6601AMR
Description
Schematic diagram
The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel： VDS =-30V，ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V RDS(ON)=68.5mΩ (typical) @ VGS=-2.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Marking and pin assignment
Application
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
Package
- SOT-23-6L
Ordering Information
Part Number NP6601AMR-G
Storage Temperature -55°C to +150°C
Package SOT-23-6L
Devices Per Reel 3000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Drain-source voltage Gate-source...
