natlinear NP6601AMR
The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NP6601AMR |
|---|---|
| Datasheet | NP6601AMR Download |
| Manufacturer | natlinear |
| Description | 30V N And P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel： VDS =-30V，ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V RDS(ON)=68.5mΩ (typical) @ VGS=-2.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Marking and pin assignment Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Package
● SOT-23-6L Ordering Information Part Number NP6601AMR-G Storage Temperature -55°C to +150°C Package SOT-23-6L Devices Per Reel 3000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Maximum power dissipation Operating junction Temperature range Rev.1.1 —Nov. 8. 2017 Symbol VDS VGS PD Tj 1 Limit Unit N P 30 -30 V ±12 ±12 V 1.1 W -55—150 -55—150 ℃ Drain Current-Continuous TA=25°C (Silicon Limited) TA=75°C...
