Datasheet Summary
40V Dual N-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP6884D6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.
D1 G1
D2 G2
General Features
- VDS =40V，ID =26A RDS(ON)=13.7 mΩ (typical) @ VGS=10V RDS(ON)=17.8 mΩ (typical) @ VGS=4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
S1
S2
Marking and pin assignment
PDFN5×6-8L-B
D1 D1 D2 D2
D2 D2 D1 D1
NP6884 XXXXX YYYYY
- DC/DC Converter
- Ideal for high-frequency...