natlinear NP6884D6
The NP6884D6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.| Part No. | NP6884D6 |
|---|---|
| Datasheet | NP6884D6 Download |
| Manufacturer | natlinear |
| Description | 40V Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram D1 G1 D2 G2GENERAL FEATURES
● VDS =40V，ID =26A RDS(ON)=13.7 mΩ (typical) @ VGS=10V RDS(ON)=17.8 mΩ (typical) @ VGS=4.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Application S1 S2 Marking and pin assignment PDFN5×6-8L-B D1 D1 D2 D2 D2 D2 D1 D1 NP6884 XXXXX YYYYY
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification S1 G1 S2 G2 Top View G2 S2 G1 S1 Bottom View Package
● PDFN5*6-8L-B XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6884D6-G Storage Temperature -55°C to +150°C Package PDFN5*6-8L-B Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Drain Current-Continuous (Silicon Limited) Pulsed Drain Current (Package Limited) Single pulse avalanche energy Maximum power dissipation TA=25°C TA=75°C TA=25°C TA=75°C symbol V DS V GS ID I DM E AS PD limit unit 40 V ±20 V 26 A 18 104 A 50 mJ 31 W 16 Rev.1.1 —Nov.
