2N7002H
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- -
VGS gate-source voltage
-20
- 20
ID drain current
VGS = 10 V; Tamb = 25 °C
[1]
- -
360 m A
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 500 m A; Tj = 25 °C resistance
- 1
1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin...
