• Part: 2N7002HS
  • Description: dual N-channel Trench MOSFET
  • Category: MOSFET
  • Manufacturer: Nexperia
  • Size: 289.86 KB
Download 2N7002HS Datasheet PDF
Nexperia
2N7002HS
2N7002HS is dual N-channel Trench MOSFET manufactured by Nexperia.
description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits - Logic-level patible - Very fast switching - Trench MOSFET technology - AEC-Q101 qualified 3. Applications - Relay driver - High-speed line driver - Low-side load switch - Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tamb = 25 °C VGS = 10 V; Tamb = 25 °C - - -20 - [1] - - 320 m A RDSon drain-source on-state VGS = 10 V; ID = 500 m A; Tj = 25 °C resistance - 1 1.6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol...