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74AUP1G00 - Low-power 2-input NAND gate

Datasheet Summary

Description

The 74AUP1G00 is a single 2-input NAND gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

Features

  • Wide supply voltage range from 0.8 V to 3.6 V.
  • CMOS low power dissipation.
  • High noise immunity.
  • Complies with JEDEC standards:.
  • JESD8-12 (0.8 V to 1.3 V).
  • JESD8-11 (0.9 V to 1.65 V).
  • JESD8-7 (1.65 V to 1.95 V).
  • JESD8-5 (2.3 V to 2.7 V).
  • JESD8C (2.7 V to 3.6 V).
  • ESD protection:.
  • HBM JESD22-A114F Class 3A exceeds 5000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101E exceeds 1000.

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Datasheet preview – 74AUP1G00

Datasheet Details

Part number 74AUP1G00
Manufacturer nexperia
File Size 269.48 KB
Description Low-power 2-input NAND gate
Datasheet download datasheet 74AUP1G00 Datasheet
Additional preview pages of the 74AUP1G00 datasheet.

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Full PDF Text Transcription

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74AUP1G00 Low-power 2-input NAND gate Rev. 8 — 13 January 2022 Product data sheet 1. General description The 74AUP1G00 is a single 2-input NAND gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features and benefits • Wide supply voltage range from 0.8 V to 3.6 V • CMOS low power dissipation • High noise immunity • Complies with JEDEC standards: • JESD8-12 (0.8 V to 1.3 V) • JESD8-11 (0.9 V to 1.65 V) • JESD8-7 (1.
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