Nexperia BAS16TH
High-speed switching diode
FEATURES AND BENEFITS
● High switching speed: trr ≤ 4 ns● Low leakage current
● Repetitive peak reverse voltage VRRM ≤ 100 V
● Low capacitance
● Small SMD plastic package
● High-temperature applications up to 175 °C
● AEC-Q101 qualified 3.
APPLICATIONS
● High-speed switching● General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ VRRM repetitive peak reverse Tj = 25 °C voltage -- IF forward current [1] - - VR reverse voltage -- VF forward voltage IF = 150 mA [2] - - IR reverse current VR = 80 V; Tj = 25 °C -- trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; -- IR(meas) = 1 mA; Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint. [2] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02 Max Unit 100 V 215 mA 100 V 1.25 V 0.5 µA 4 ns Nexperia BAS16TH High-speed switching diode 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 A anode 2 n.c. not connected 3 K cathode Simplified outline 3 Graphic symbol K A n.c.