BAS16TH - High-speed switching diode

Datasheet Summary

Description

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features

High switching speed: trr ≤ 4 ns.
Low leakage current.
Repetitive peak reverse voltage VRRM ≤ 100 V.
Low capacitance.
Small SMD plastic package.
High-temperature.

nexperia

📥 Download Datasheet

Datasheet Details

Part number	BAS16TH
Manufacturer	nexperia
File Size	263.83 KB
Description	High-speed switching diode
Datasheet	BAS16TH Datasheet
Additional preview pages of the BAS16TH datasheet.

📁 Similar Datasheet

BAS16T - High-speed switching diodes (NXP)
BAS16T - SURFACE MOUNT FAST SWITCHING DIODE (WON-TOP)
BAS16T - SWITCHING DIODE (WILLAS)
BAS16T - Switching Diode (LGE)
BAS16T - SWITCHING DIODE (JCET)
BAS16T - SWITCHING DIODE (Transys)
BAS16T - Switching Diodes (MCC)
BAS16T - SURFACE-MOUNT FAST SWITCHING DIODE (DIODES)
BAS16T - Surface Mount Fast Switching Diode (GME)
BAS16T - High-speed diode (Philips)

Other Datasheets by nexperia

BAS16TH-Q - High-speed switching diode
BAS16T - High-speed switching diode
BAS16 - High-speed switching diode
BAS16DY-Q - High-speed dual switching diode
BAS16GW - High-speed switching diode
BAS16GW-Q - High-speed switching diode
BAS16H - High-speed switching diode
BAS16J - High-speed switching diode

Full PDF Text Transcription

Click to expand full text

BAS16TH High-speed switching diode 7 December 2018 Product data sheet 1. General description High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current • Repetitive peak reverse voltage VRRM ≤ 100 V • Low capacitance • Small SMD plastic package • High-temperature applications up to 175 °C • AEC-Q101 qualified 3. Applications • High-speed switching • General-purpose switching 4. Quick reference data Table 1.

Published: Jul 23, 2019 |