BAS16TH-Q - High-speed switching diode

Datasheet Summary

Description

High-speed switching diode, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Features

High switching speed: trr ≤ 4 ns.
Low leakage current.
Repetitive peak reverse voltage VRRM ≤ 100 V.
Low capacitance.
Small SMD plastic package.
High-temperature.

nexperia

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Datasheet Details

Part number	BAS16TH-Q
Manufacturer	nexperia
File Size	266.79 KB
Description	High-speed switching diode
Datasheet	BAS16TH-Q Datasheet
Additional preview pages of the BAS16TH-Q datasheet.

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Full PDF Text Transcription

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BAS16TH-Q High-speed switching diode 18 March 2025 Product data sheet 1. General description High-speed switching diode, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low leakage current • Repetitive peak reverse voltage VRRM ≤ 100 V • Low capacitance • Small SMD plastic package • High-temperature applications up to 175 °C • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • High-speed switching • General-purpose switching 4. Quick reference data Table 1.

Published: Aug 15, 2025 |