Nexperia BAS321J
High-voltage switching diode
| Part No. | BAS321J |
|---|---|
| Datasheet | BAS321J Download |
| Manufacturer |  Nexperia |
| Description | High-voltage switching diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High switching speed: trr ≤ 50 ns● Low leakage current: IR ≤ 100 nA
● High reverse voltage VR ≤ 200 V
● Low capacitance: Cd ≤ 2 pF
● Very small SMD plastic package
● AEC-Q101 qualified 3.
APPLICATIONS
● High-speed switching● General-purpose switching
● Voltage clamping
● Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ IF VR VRRM forward current reverse voltage repetitive peak reverse voltage [1] - - VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; -- Tj = 25 °C IR reverse current VR = 200 V; pulsed; Tj = 25 °C -- trr reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω; -- IR(meas) = 3 mA; Tj = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Max Unit 250 mA 200 V 250 V 1.25 V 100 nA 50 ns Nexperia BAS321J High-voltage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K Cathode 2 A Anode Simplified outline 12 SC-90 (SOD323F) Graphic symbol KA aaa-028035 6.
