BAS321J - High-voltage switching diode

Nexperia

General Description

High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package.

Key Features

High switching speed: trr ≤ 50 ns.
Low leakage current: IR ≤ 100 nA.
High reverse voltage VR ≤ 200 V.
Low capacitance: Cd ≤ 2 pF.
Very small SMD plastic package.
AEC-Q101 qualified 3.

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BAS321J high-voltage switching diode by Nexperia - Datasheet Preview

Datasheet Details

Part number	BAS321J
Manufacturer	Nexperia
File Size	190.70 KB
Description	High-voltage switching diode
Datasheet	BAS321J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS321J High-voltage switching diode 23 March 2018 Product data sheet 1. General description High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Very small SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed switching • General-purpose switching • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ IF VR VRRM forward current reverse voltage repetitive peak reverse voltage [1] - - VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.