BCX56-10-Q
description
NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package
2. Features and benefits
- High collector current capability IC and ICM
- Three current gain selections
- High power dissipation capability
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Linear voltage regulators
- MOSFET drivers
- Low-side switches
- Battery-driven devices
- Power management
- MOSFET drivers
- Amplifiers
4. Quick reference data
Table 1. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VCEO collector-emitter voltage open base
IC collector current
ICM peak collector current single pulse; tp ≤ 1 ms h FE
DC current gain
BCX56-Q
VCE = 2 V; IC = 150 m A
BCX56-16-Q
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
Min Typ Max Unit
- -
- -
- -
[1] 63
- 250
[1] 63
- 160
[1] 100
-...
