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BSS84AKQB - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Side wettable flanks for optical solder inspection.
  • Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C).
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS84AKQB 50 V, P-channel Trench MOSFET 13 July 2021 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Side wettable flanks for optical solder inspection • Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.