Datasheet Summary
50 V, 160 mA dual P-channel Trench MOSFET
Rev. 1
- 23 May 2011
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 1 kV
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Per transistor
VDS drain-source voltage
Tj = 25 °C
VGS gate-source voltage
ID...
