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BUK6M61-60P - P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK33 package using Trench MOSFET technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

Features

  • High thermal power dissipation capability.
  • Suitable for thermally demanding environments due to 175 °C rating.
  • Trench MOSFET technology.
  • AEC-Q101 qualified 3.

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Datasheet preview – BUK6M61-60P

Datasheet Details

Part number BUK6M61-60P
Manufacturer nexperia
File Size 305.30 KB
Description P-channel Trench MOSFET
Datasheet download datasheet BUK6M61-60P Datasheet
Additional preview pages of the BUK6M61-60P datasheet.

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Full PDF Text Transcription

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BUK6M61-60P 60 V, P-channel Trench MOSFET 2 September 2024 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK33 package using Trench MOSFET technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • High thermal power dissipation capability • Suitable for thermally demanding environments due to 175 °C rating • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Reverse polarity protection • Power management • High-side load switch • Motor drive 4. Quick reference data Table 1.
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