BUK6Y61-60P
BUK6Y61-60P is P-channel MOSFET manufactured by Nexperia.
description
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This product has been designed and qualified to AEC-Q101 standard for use in high-performance automotive applications such as reverse battery protection.
2. Features and benefits
- High thermal power dissipation capability
- Suitable for thermally demanding environments due to 175 °C rating
- Trench MOSFET technology
- AEC-Q101 qualified
3. Applications
- Reverse battery protection
- Power management
- High-side loadswitch
- Motor drive
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage VGS gate-source voltage ID drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -10 V; Tmb = 25 °C Tmb = 25 °C
VGS = -10 V; ID = -4.7 A; Tj = 25 °C
Min Typ -[1] -20 ---
- 48
[1] VGS = -20 V/+5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/+20 V according AEC-Q101 at Tj = 150 °C
Max Unit -60 V 20 V -25 A 66 W
61 mΩ
Nexperia
60 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1S source mb
2S source
3S source
4G gate mb D mounting base; connected to drain
LFPAK56; Power SO8...
