BUK7K23-80E
BUK7K23-80E is dual N-channel MOSFET manufactured by Nexperia.
description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using Trench MOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
2. Features and benefits
- Dual MOSFET
- AEC-Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Limiting values FET1 and FET2
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; resistance
Fig. 11
Dynamic characteristics FET1 and FET2
QGD gate-drain charge
ID = 10 A; VDS = 64 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
Source-drain diode FET1 and FET2
Qr recovered charge
IS = 10 A; d IS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
- - 80 V
- - 17 A
- - 53 W
- 17.6 23 mΩ
-...
