• Part: BUK9605-30A
  • Description: N-channel MOSFET
  • Category: MOSFET
  • Manufacturer: Nexperia
  • Size: 1.58 MB
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Nexperia
BUK9605-30A
BUK9605-30A is N-channel MOSFET manufactured by Nexperia.
description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance 1.3 Applications - Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C ID = 75 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 30 V - - 75 A - - 230 W - 4.3 5 mΩ - 3.9 4.6 mΩ - - 500 m J Nexperia N-channel Trench MOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain[1] S source D mounting base; connected to drain Simplified outline mb 2 13 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Graphic symbol G mbb076 S Table 3. Ordering information Type number Package Name D2PAK 4. Limiting...