BUK9675-55A Datasheet | Nexperia

description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Automotive and general purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS Ptot Quick reference data Parameter Conditions drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 total power dissipation Tmb = 25 °C; see Figure 2 Min Typ Max Unit - - 55 V - - 20 A - - 62 W Nexperia N-channel Trench MOS logic level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 12 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 81...