• Part: BUK9J0R9-40H
  • Description: N-channel MOSFET
  • Category: MOSFET
  • Manufacturer: Nexperia
  • Size: 269.32 KB
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Nexperia
BUK9J0R9-40H
BUK9J0R9-40H is N-channel MOSFET manufactured by Nexperia.
description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits - Fully automotive qualified to AEC-Q101: - 175 °C rating suitable for thermally demanding environments - Trench 9 Superjunction technology: - Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint - Improved SOA and avalanche capability pared to standard Trench MOS - Tight VGS(th) limits enable easy paralleling of MOSFETs - LFPAK Gull Wing leads: - High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages - Visual (AOI) soldering inspection, no need for expensive x-ray equipment - Easy solder wetting for good mechanical solder joint - LFPAK copper clip technology: - Improved reliability, with reduced Rth and RDSon - Increases maximum current capability and improved current spreading 3. Applications - 12 V automotive systems - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 Min Typ Max Unit - - 40 V [1] - - 220 A - - 500 W Nexperia N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E Symbol Parameter Static characteristics RDSon drain-source on-state...