BUK9K61-100L Datasheet | Nexperia

description Dual N-channel logic level MOSFET in an LFPAK56D (Dual Power-SO8) package. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits - Dual MOSFET - two silicon dies in one LFPAK56D package for significant space saving - Trench12 MOSFET technology - Efficient switching with soft body-diode recovery - Automotive qualified to AEC-Q101 at 175 °C - Side-wettable flanks for robust solder joints and automatic optical inspection 3. Applications - 12 V, 24 V and 48 V automotive systems - Motor, lighting, and solenoid control - Transmission control - LED lighting - Circuit protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Limiting values FET1 and FET2 VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 5 A; VDS = 50 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 100 V - - - - 44.6 60.1...