BUK9Q45-80L Datasheet | Nexperia

description Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits - Logic-level patible - Trench12 MOSFET technology - Efficient switching with soft body-diode recovery - Automotive qualified to AEC-Q101 at 175°C - Side-wettable flanks for robust solder joints and automatic optical inspection 3. Applications - LED lighting - DC-to-DC conversion - Solenoid, motor and other load switching - Circuit protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 4.7 A; Tj = 25 °C; Fig. 11 ID = 4.7 A; VDS = 40 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 IS = 1.8 A; d IS/dt = -100 A/µs; VGS = 0 V; VDS = 40 V; Tj = 25 °C Min Typ Max Unit - - [1] - - - - 27.3 W - 35 45...