MJPE31C - 100V 3A NPN high power bipolar transistor

Datasheet Summary

Description

NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.

Features

High thermal power dissipation capability.
High energy efficiency due to less heat generation.
Electrically similar to popular MJD31 series.
Low collector emitter saturation voltage 3.

nexperia

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Datasheet Details

Part number	MJPE31C
Manufacturer	nexperia
File Size	271.84 KB
Description	100V 3A NPN high power bipolar transistor
Datasheet	MJPE31C Datasheet
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MJPE31C 100 V, 3 A NPN high power bipolar transistor 22 April 2025 Product data sheet 1. General description NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.

Published: Jul 13, 2025 |