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MJPE31C - 100V 3A NPN high power bipolar transistor

General Description

NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD31 series.
  • Low collector emitter saturation voltage 3.

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Datasheet Details

Part number MJPE31C
Manufacturer Nexperia
File Size 271.84 KB
Description 100V 3A NPN high power bipolar transistor
Datasheet download datasheet MJPE31C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJPE31C 100 V, 3 A NPN high power bipolar transistor 22 April 2025 Product data sheet 1. General description NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.