• Part: MJPE31C
  • Description: 100V 3A NPN high power bipolar transistor
  • Category: Transistor
  • Manufacturer: Nexperia
  • Size: 271.84 KB
Download MJPE31C Datasheet PDF
Nexperia
MJPE31C
MJPE31C is 100V 3A NPN high power bipolar transistor manufactured by Nexperia.
description NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP plement: MJPE32C 2. Features and benefits - High thermal power dissipation capability - High energy efficiency due to less heat generation - Electrically similar to popular MJD31 series - Low collector emitter saturation voltage 3. Applications - Power management - Load switch - Linear mode voltage regulator - Constant current drive backlighting application - Motor drive - Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current h FE DC current gain Conditions open base single pulse; tp ≤ 1 ms VCE = 4 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 4 V; IC = 3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 100 V - - - - - - - - Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description E...