MJPE31CH-Q Description
NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.
MJPE31CH-Q Key Features
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- High current gain at VCE = 60 V
- Electrically similar to popular MJD31 series
- Low collector emitter saturation voltage
- Qualified according to AEC-Q101 and remended for use in automotive