MJPE31CH-Q - 100V 3A NPN high power bipolar transistor

Datasheet Summary

Description

NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.

Features

High thermal power dissipation capability.
High energy efficiency due to less heat generation.
High current gain at VCE = 60 V.
Electrically similar to popular MJD31 series.
Low collector emitter saturation voltage.
Qualified according to AEC-Q101 and recommended for use in automotive.

nexperia

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Datasheet Details

Part number	MJPE31CH-Q
Manufacturer	nexperia
File Size	268.47 KB
Description	100V 3A NPN high power bipolar transistor
Datasheet	MJPE31CH-Q Datasheet
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MJPE31CH-Q 100 V, 3 A NPN high power bipolar transistor 22 April 2025 Product data sheet 1. General description NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.

Published: Oct 12, 2025 |