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NGD4300-Q100 - 4A peak high-performance dual MOSFET gate driver

General Description

2.

Key Features

  • The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a halfbridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both lowside and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accept.

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Datasheet Details

Part number NGD4300-Q100
Manufacturer Nexperia
File Size 2.44 MB
Description 4A peak high-performance dual MOSFET gate driver
Datasheet download datasheet NGD4300-Q100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NGD4300-Q100 4 A peak high-performance dual MOSFET gate driver Rev. 2.1 — 18 July 2025 Product data sheet 1. General description 2. Features and benefits The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a halfbridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both lowside and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%).