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NGW50T65H3DFP - 50A high speed trench field-stop IGBT

Product Overview

nexperia

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NGW50T65H3DFP 50A high speed trench field-stop IGBT by nexperia - Datasheet Preview — Datasheet preview – NGW50T65H3DFP

Datasheet Details

Part number	NGW50T65H3DFP
Manufacturer	nexperia
File Size	362.61 KB
Description	50A high speed trench field-stop IGBT
Datasheet	NGW50T65H3DFP Datasheet
Additional preview pages of the NGW50T65H3DFP datasheet.

Product details

Description

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

Features

Collector current (IC) rated at 50 A.
Low conduction and switching losses.
Stable and tight parameters for easy parellel operation.
Maximum junction temperature of 175 °C.
Fully rated as a soft fast reverse recovery diode.
RoHS compliant, lead-free plating 3.

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Published: Jul 11, 2024 |