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NGW50T65M3DFP - 650V 50A trench field-stop IGBT

Product Overview

nexperia

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NGW50T65M3DFP 650V 50A trench field-stop IGBT by nexperia - Datasheet Preview — Datasheet preview – NGW50T65M3DFP

Datasheet Details

Part number	NGW50T65M3DFP
Manufacturer	nexperia
File Size	373.42 KB
Description	650V 50A trench field-stop IGBT
Datasheet	NGW50T65M3DFP Datasheet
Additional preview pages of the NGW50T65M3DFP datasheet.

Product details

Description

The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

Features

Device current is rated at 50 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
5 μs short circuit withstand time.
HV-H3TRB qualified 3.

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Published: Apr 23, 2025 |