Datasheet4U.com

NGW30T65M3DFP - 650V 30A trench field-stop IGBT

Product Overview

nexperia

📥 Download Datasheet

NGW30T65M3DFP 650V 30A trench field-stop IGBT by nexperia - Datasheet Preview — Datasheet preview – NGW30T65M3DFP

Datasheet Details

Part number	NGW30T65M3DFP
Manufacturer	nexperia
File Size	363.86 KB
Description	650V 30A trench field-stop IGBT
Datasheet	NGW30T65M3DFP Datasheet
Additional preview pages of the NGW30T65M3DFP datasheet.

Product details

Description

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology.

Features

Device current is rated at 30 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
5 μs short circuit withstand time.
HV-H3TRB qualified 3.

📁 Similar Datasheet

Other Datasheets by nexperia

NGW40T65H3DFP - 650V 40A trench field-stop IGBT
NGW40T65H3DHP - 650V 40A trench field-stop IGBT
NGW40T65M3DFP - 650V 40A trench field-stop IGBT
NGW50T65H3DFP - 50A high speed trench field-stop IGBT
NGW50T65M3DFP - 650V 50A trench field-stop IGBT
NGW60T65M3DFP - 650V 60A trench field-stop IGBT

Published: Apr 23, 2025 |