NGW40T65H3DFP Key Features
- Device current is rated at 40 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature 175 °C
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
| Part Number | Description |
|---|---|
| NGW40T65H3DHP | 650V 40A trench field-stop IGBT |
| NGW40T65M3DFP | 650V 40A trench field-stop IGBT |
| NGW30T65M3DFP | 650V 30A trench field-stop IGBT |
| NGW50T65H3DFP | 50A high speed trench field-stop IGBT |
| NGW50T65M3DFP | 650V 50A trench field-stop IGBT |