NGW40T65M3DFP
description
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It bines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
2. Features
- Device current is rated at 40 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature 175 °C
- Fully rated and soft fast reverse recovery diode
- 5 μs short circuit withstand time
- HV-H3TRB qualified
3. Applications
- Motor drives for industrial and consumer appliances
- Servo motors operating between 5-20 k W (up to 20 k Hz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
- Power inverters, such as
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