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NGW40T65M3DFP - 650V 40A trench field-stop IGBT

Product Overview

nexperia

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NGW40T65M3DFP 650V 40A trench field-stop IGBT by nexperia - Datasheet Preview — Datasheet preview – NGW40T65M3DFP

Datasheet Details

Part number	NGW40T65M3DFP
Manufacturer	nexperia
File Size	256.22 KB
Description	650V 40A trench field-stop IGBT
Datasheet	NGW40T65M3DFP Datasheet
Additional preview pages of the NGW40T65M3DFP datasheet.

Product details

Description

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

Features

Device current is rated at 40 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and soft fast reverse recovery diode.
5 μs short circuit withstand time.
HV-H3TRB qualified 3.

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Published: Jul 11, 2024 |