NGW40T65H3DHP - 650V 40A trench field-stop IGBT

Product Overview

nexperia

Part number	NGW40T65H3DHP
Manufacturer	nexperia
File Size	258.06 KB
Description	650V 40A trench field-stop IGBT
Datasheet	NGW40T65H3DHP Datasheet
Additional preview pages of the NGW40T65H3DHP datasheet.

The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

IGBT collector current is rated at 40 A, diode forward current is rated at 20 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
HV-H3TRB qualified 3.

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Published: Apr 23, 2025 |