NGW75T65H3DF
Description
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It bines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
2. Features and benefits
- Collector current (IC) rated at 75 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature of 175 °C
- Fully rated as a soft fast reverse recovery diode
- Ro HS pliant, lead-free plating
3. Applications
- Power inverters
- Uninterruptible Power Supply (UPS) inverter
- Photovoltaic (PV) strings
- EV charging
- Induction heating
- Welding
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VCE collector-emitter voltage
Tj = 25 °C
Tj operating junction temperature
Min
Ma...
