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NGW75T65H3DF - 75A high speed trench field-stop IGBT

Product Overview

nexperia

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NGW75T65H3DF 75A high speed trench field-stop IGBT by nexperia - Datasheet Preview — Datasheet preview – NGW75T65H3DF

Datasheet Details

Part number	NGW75T65H3DF
Manufacturer	nexperia
File Size	256.35 KB
Description	75A high speed trench field-stop IGBT
Datasheet	NGW75T65H3DF Datasheet
Additional preview pages of the NGW75T65H3DF datasheet.

Product details

Description

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

Features

Collector current (IC) rated at 75 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature of 175 °C.
Fully rated as a soft fast reverse recovery diode.
RoHS compliant, lead-free plating 3.

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Published: Jul 11, 2024 |