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NGW75T65H3DFP - 650V 75A trench field-stop IGBT

Product Overview

nexperia

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NGW75T65H3DFP 650V 75A trench field-stop IGBT by nexperia - Datasheet Preview — Datasheet preview – NGW75T65H3DFP

Datasheet Details

Part number	NGW75T65H3DFP
Manufacturer	nexperia
File Size	261.02 KB
Description	650V 75A trench field-stop IGBT
Datasheet	NGW75T65H3DFP Datasheet
Additional preview pages of the NGW75T65H3DFP datasheet.

Product details

Description

The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

Features

Device current is rated at 75 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
HV-H3TRB qualified 3.

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Published: Apr 23, 2025 |