NGW75T65H3DFP
description
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It bines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
2. Features
- Device current is rated at 75 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature 175 °C
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
3. Applications
- Power inverters such as
- Uninterruptible Power Supply (UPS) inverter
- EV charging converter
- Power Factor Correction (PFC)
- Induction heating
- Welding
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VCES collector-emitter voltage
Tvj = 25 °C
Tvj operating junction temperature
Min
Max Unit
-...
