NGW75T65H3DFP Description
The NGW75T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It bines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses.
NGW75T65H3DFP Key Features
- Device current is rated at 75 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature 175 °C
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified