NX3020NAKS-Q Overview
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
NX3020NAKS-Q Key Features
- Logic-level patible
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection
- AEC-Q101 qualified
