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NX3020NAKS-Q - 30V dual N-channel Trench MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection.
  • AEC-Q101 qualified 3.

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NX3020NAKS-Q 30 V, dual N-channel Trench MOSFET 14 May 2025 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.