Datasheet4U Logo Datasheet4U.com

NX3020NAKV - Dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very fast switching.
  • Trench MOSFET technology.
  • ESD protection.
  • Low threshold voltage 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NX3020NAKV dual N-channel Trench MOSFET NXP
NX3020NAK single N-channel Trench MOSFET NXP
NX3020NAKS MOSFET NXP
NX3020NAKT MOSFET NXP Semiconductors
NX3020NAKW MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
NX3020NAK N-channel MOSFET
NX3020NAK-Q 30V N-channel Trench MOSFET
NX3020NAKQB-Q 30V N-channel Trench MOSFET
NX3020NAKRA-Q 30V dual N-channel Trench MOSFET
NX3020NAKS dual N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.