Datasheet4U Logo Datasheet4U.com

NX6008NBK - N-channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

Datasheet preview – NX6008NBK

Datasheet Details

Part number NX6008NBK
Manufacturer nexperia
File Size 273.77 KB
Description N-channel MOSFET
Datasheet download datasheet NX6008NBK Datasheet
Additional preview pages of the NX6008NBK datasheet.

📁 Similar Datasheet

  • NX6240GP - LASER DIODE (California Eastern Labs)
  • NX6301 - LASER DIODE (CEL)
  • NX6306 - LASER DIODE (CEL)
  • NX6307 - LASER DIODE (CEL)
  • NX6308GH - LASER DIODE (California Eastern Labs)
  • NX6309GH - LASER DIODE (California Eastern Labs)
  • NX6311EH - LASER DIODE (CEL)
  • NX6314EH - LASER DIODE (California Eastern Labs)
  • NX6342EP - LASER DIODE (California Eastern Labs)
  • NX6350GP - LASER DIODE (California Eastern Labs)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
NX6008NBK 60 V, N-channel Trench MOSFET 19 August 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 4.
Published: |