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NX6008NBKS - dual N-channel MOSFET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NX6008NBKS 60 V, dual N-channel Trench MOSFET 19 August 2021 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 4.