NX6008NBKS
NX6008NBKS is dual N-channel MOSFET manufactured by Nexperia.
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection > 2 k V HBM
3. Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 300 m A; Tj = 25 °C resistance
Min Typ Max
- -
-8
- 8
- -
- 2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Unit V V m A
Ω
Nexperia
5. Pinning information
Table 2. Pinning information
Pin...
