NXV100XP
NXV100XP is P-channel Trench MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
- -
-30
VGS gate-source voltage
-12
- 12
ID drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
- -
-1.5
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -1.5 A; Tj = 25 °C resistance
- 104 140
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A mΩ
Nexperia
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol...
