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NXV75UP - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXV75UP 20 V, P-channel Trench MOSFET 19 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -8 - 8 ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -1.8 Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -1.