Datasheet Summary
60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP plement: PBSS4260PANP. PNP/PNP plement: PBSS5260PAP.
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Load switch
- Battery-driven devices
-...
