Datasheet4U Logo Datasheet4U.com

PBSS4260PANPS - NPN/PNP Transistor

General Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • Exposed heat sink for excellent thermal and electrical conductivity.
  • High energy efficiency due to less heat generation.
  • Suitable for Automatic Optical Inspection (AOI) of solder joints.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS4260PANP NPN/NPN low VCEsat (BISS) transistor NXP
PBSS4260PAN NPN/NPN low VCEsat (BISS) transistor NXP
PBSS4260QA NPN low VCEsat (BISS) transistor NXP
PBSS4220V 2A NPN low VCEsat (BISS) transistor NXP
PBSS4230PAN NPN/NPN low VCEsat (BISS) transistor NXP

Other Datasheets by Nexperia

Part Number Description
PBSS4260PANP 2A NPN/PNP low VCEsat (BISS) transistor
PBSS4260PAN 2A NPN/NPN low VCEsat (BISS) transistor
PBSS4260PANS NPN/NPN Transistor
PBSS4220PANS NPN/NPN Transistor
PBSS4230PAN 2A NPN/NPN low VCEsat (BISS) transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor 4 February 2016 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4260PANS PNP/PNP complement: PBSS5260PAPS 2.