Datasheet Summary
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
4 February 2016
Product data sheet
1. General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN plement: PBSS4260PANS
PNP/PNP plement: PBSS5260PAPS
2. Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- Exposed heat sink for excellent thermal and electrical conductivity
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