PBSS4350Z Description
NPN low VCEsat transistor in a SOT223 plastic package.
PBSS4350Z Key Features
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
- High collector current gain (hFE ) at high IC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements pared to DPAK
- AEC-Q101 qualified