PBSS4350Z
Overview
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
- High collector current gain (hFE ) at high IC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements compared to DPAK.
- AEC-Q101 qualified
