PBSS4350SS Datasheet | Nexperia

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 - 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4350SS SOT96-1 Name SO8 NPN/PNP plement PBSS4350SPN PNP/PNP plement PBSS5350SS 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (h FE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per transistor VCEO IC ICM collector-emitter voltage collector current peak collector current RCEsat collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions open base single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 m A Min Typ Max Unit - - 50 V - - 2.7...