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PBSS4350S - 50 V low VCEsat NPN transistor

General Description

NPN low VCEsat transistor in a SOT54 plastic package.

PNP complement: PBSS5350S.

Key Features

  • High power dissipation (830 mW).
  • Ultra low collector-emitter saturation voltage.
  • 3 A continuous current.
  • High current switching.
  • Improved device reliability due to reduced heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generation APPLICATIONS • Medium power switching and muting • Linear regulators • DC/DC convertor • Supply line switching circuits • Battery management applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5350S. MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.