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PBSS4350S Datasheet 50 V Low Vcesat NPN Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN.

General Description

NPN low VCEsat transistor in a SOT54 plastic package.

PNP complement: PBSS5350S.

MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

Key Features

  • High power dissipation (830 mW).
  • Ultra low collector-emitter saturation voltage.
  • 3 A continuous current.
  • High current switching.
  • Improved device reliability due to reduced heat generation.

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