PBSS4350S Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor Features - High power dissipation (830 mW) - Ultra low collector-emitter saturation voltage - 3 A continuous current - High current switching - Improved device reliability due to reduced heat generation APPLICATIONS - Medium power switching and muting - Linear regulators - DC/DC convertor - Supply line switching circuits - Battery management applications - Strobe flash units - Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT54...