PBSS4350S Description
NPN low VCEsat transistor in a SOT54 plastic package. MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. LIMITING VALUES In accordance with the Rating System (IEC 60134).
PBSS4350S Key Features
- High power dissipation (830 mW)
- Ultra low collector-emitter saturation voltage
- 3 A continuous current
- High current switching
- Improved device reliability due to reduced heat generation