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PBSS4350Z - NPN transistor

Key Features

  • Low collector-emitter saturation voltage.
  • High collector current capability: IC and ICM.
  • High collector current gain (hFE) at high IC.
  • Higher efficiency leading to less heat generation.
  • Reduced PCB area requirements compared to DPAK.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors 50 V low VCEsat NPN transistor Product data sheet PBSS4350Z FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – Linear voltage regulation (LDO). • Peripheral drivers – Driver in low supply voltage applications, e.g. lamps, LEDs – Inductive load driver, e.g. relays, buzzers, motors.