PBSS4350Z Description
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors 50 V low VCEsat NPN transistor Product data sheet PBSS4350Z.
PBSS4350Z Key Features
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements pared to DPAK