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PBSS4350X - transistor

General Description

NPN low VCEsat transistor in a SOT89 plastic package.

PNP complement: PBSS5350X.

Fig.1 Simplified outline (SOT89) and symbol.

Key Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements. QUICK.

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Other Datasheets by NXP Semiconductors

Part Number Description
PBSS4350D NPN transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4350X 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors 50 V, 3 A NPN low VCEsat (BISS) transistor Product specification PBSS4350X FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.