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PBSS4350SS - transistor

General Description

NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Key Features

  • I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP PBSS4350SS SOT96-1 Name SO8 NPN/PNP complement PBSS4350SPN PNP/PNP complement PBSS5350SS 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive 1.